Publication at Faculty of Mathematics and Physics |
2023
Abstract
We proposed a self-powered UV-vis-NIR Schottky junction photodiode based on a unique combination of radiation-hard functional materials: thin-film semi-metal Graphite and CdZnTe single-crystal compound semiconductor. The graphite/CdZnTe Schottky junction photodiodes exhibit a maximum responsivity of 0.25 A W-1 and detectivity of 6.5 x 10(11) Jones, close to the best heterojunction photodiodes based on CdZnTe solid solution.
The devices are also characterized by short rise/fall times (1.2/7.2 mu s) and a wide linear dynamic range (77 dB). The proposed photodiodes are promising for applications in space and terrestrial areas with high levels of ionizing radiation.