Publikace na Matematicko-fyzikální fakulta |
2023
Abstrakt
High-quality epitaxial graphene (EG) can be grown on the surface of silicon carbide (SiC) by thermal decomposition of silicon. The possibility of optical gating of EG and the effect of the surrounding environment on the electrical properties and stability of EG were investigated.
The surrounding environment includes the SiC substrate, atmosphere, and passivation by oxide layer. EG in the shape of Hall bars were prepared using e-beam lithography.
Time-dependent and spectral photoconductivity measurements were performed on non-passivated and passivated samples.