Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Abstract

Photoluminescence (PL) from the vapour deposited layers of CdTe have demonstrated a unique quality improvement after asgrown samples have been annealed at relatively low temperatures (500-600 C). The sub-band gap emissions at 4.2 K have been centred at the 1.42 and 1.47 eV and they have different intensity power dependencies.

Keywords

• Sub-bandgap
• photoluminescence
• as-grown
• annealed
• layers
• CdTe