Abstract
The photoemission study compares electronic states in three different ceria thin film surfaces prepared on a Cu(111) single-crystal surface by vapor deposition at different conditions: at 250°C, at room temperature and finally Au-doped ceria film obtained by simultaneous deposition of Au and CeO2 at room temperature (RT). Electronic properties of the layers and interaction of gold with CeO2 were investigated with use of synchrotron-radiation-excited PES and resonant photoemission (Ce 4d 4f transitions).
We have observed partial Ce4 -} Ce3 reduction induced by decrease of deposition temperature to RT instead 250°C and also by doping ceria by gold, accompanied by a 4f resonance enhancement of the Ce3 species. In the case of Au-doped sample the surface reduction degree is stronger