Compensation and trapping in large bandgap semiconductors: Tuning of the defect system in CdZnTe

Abstract

We investigated theoretically the compositional dependences of deep-level ionization energies, and its possible influence on compensation, and photosensitivity in large bandgap semiconductors. Experimentally, it was illustrated in a semi-insulating Cd1-ZnxTe ingot grown by the vertical Bridgman method.

Keywords

• Compensation
• trapping
• large
• bandgap
• semiconductors
• Tuning
• defect
• system
• CdZnTe