Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances

Abstract

Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot.

Keywords

• Characterization
• compensation
• trapping
• CdZnTe
• Recent
• advances