Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor

Abstract

We report on the recharging of the neutral state of a deep-donor layer that increases the efficiency of charge collection in detector-grade CdTe:In. Measurements with photoinduced current transient spectroscopy and thermoelectric effect spectroscopy revealed positively charged energy level at EC-0.65 eV.

Keywords

• Compensation
• carrier
• trapping
• indium-doped
• Contributions
• important
• near-mid-gap
• donor