Y3Al5O12 :Ce thin films were grown from PbO-,BaO-, and MoO3-based fluxes using the liquid phase epitaxy method. Photoelectron yield, its time dependence within 0.5-10 mis shaping time, and energy resolution of these samples were measured under aplha-particle excitation.
Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. Obtained results are discussed taking into account the influence of the flux and technology used.
Additionally, aplha particle energy deposition in very thin films is modelled and discussed.