Si islands with 1x1 termination formed by desorption of Tl from Si(111) surface

Abstract

Si islands with 1x1 termination on the Si(111) surface prepared by desporption of Tl is reported. Structure of the islands is interpreted as the dimer-stacking-fault model.

Stabilization by subsurface dimers is proposed.

Keywords

• islands
• termination
• formed
• desorption
• surface