In this work, time dependences of crystallization of amorphous thin films on Si substrates with different thickness (50-2000 nm) prepared by magnetron sputtering were studied by in-situ measurements in high-temperature chamber in laboratory X-ray diffractometer X-Pert Pro at several temperatures. They were selected below the temperature where fast crystallization appears (about 220 °C).
The process is then slow and allows detailed time in-situ investigations even in laboratory conditions. For comparison, amorphous and nanocrystalline powders were measured in the chamber as well.