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Photoluminescence of n-doped double quantum wellelectron subbands under influence of in-plane magnetic fields

Publication at Faculty of Mathematics and Physics |
2006

Abstract

We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high magnetic fields. Measurements were carried out on a selectively contacted symmetric p-dn-DQW-dn-p structure, which allows a variation of the electron density in DQW by a pn bias and simultaneously a tilting of DQW, when a pp bias is applied.

Attention was paid to phenomena in inplane magnetic firlds, theoretically studied by Huang and Lyo (HL), [Phys. Rev.

B 59, (1999) 7600]. In this paper, we compare our results for both symmetric and asymmetric DQWs with the theoretical model made by HL.

Whereas the spectra from a symmetric DQW fully confirmed the theoretical predictions, the results gained from DQW with an electric-field-induced asymmetry did not allow a proper study of anticipated effects. The reasons for that are discussed.