Defect-controlled electronic transport in single, bilayer, and N-doped graphene: Theory

Abstract

We report on a theoretical study of the electronic-structure and transport properties of single and bilayer graphene with vacancy defects, as well as N-doped graphene. We calculate the amount of defects needed for a transition from a nonconducting to a conducting regime i.e., a metal-insulator transition and establish the threshold of the defect concentration where the increase in impurity scattering dominates over the increase in carrier-induced conductivity.

Keywords

• Defect-controlled electronic transport
• single
• bilayer
• N-doped graphene