Publication at Faculty of Mathematics and Physics |
2010
Abstract
Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He+ ions. The films were prepared by reactive DC sputtering at the temperatures of -200 C, +25 C and +300 C.
A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at -200 C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface.