- Growth and characterization of GaN:Mn layers by MOVPE2008 | Faculty of Mathematics and Physics
- Transport-controlling deep defects in MOVPE grown GaSb2006 | Faculty of Mathematics and Physics
- Impact of Ge doping on MOVPE grown InGaN layers2023 | Faculty of Mathematics and Physics
- Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers2022 | Faculty of Mathematics and Physics
- Current-Voltage characteristics of GaSb homojunctions prepared by MOVPE2003 | Faculty of Mathematics and Physics, Central Library of Charles University
- Transport mechanism and spectral characteristics of GaSb GaAs heterostructures prepared by MOVPE2001 | Faculty of Mathematics and Physics, Central Library of Charles University
- Transport Mechanism and Spectral Characteristics of GaSb/GaAs heterostructures prepared by MOVPE2002 | Publication without faculty affiliation
- Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE2003 | Faculty of Mathematics and Physics, Central Library of Charles University
- Optical characterisation of pure MOVPE - grown ZnSe epilayers1994 | Publication without faculty affiliation
- Excitons and Biexcitons in MOVPE-Grown ZnS Epitaxial Layers1995 | Publication without faculty affiliation
- Improvement of luminescence properties of n-GaN using TEGa precursor2020 | Faculty of Mathematics and Physics
- Mn doped GaN thin films and nanoparticles2012 | Faculty of Mathematics and Physics
- In-situ doping and implantation of GaN layers with Mn +12009 | Faculty of Mathematics and Physics
- V-pits formation in InGaN/GaN: influence of threading dislocations and indium content2022 | Faculty of Mathematics and Physics
- Strain relaxation of InGaN/GaN Strain relaxation of InGaN/GaN by formation of V-pits by formation of V-pits2019 | Faculty of Mathematics and Physics